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Journal Articles

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu

Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00

https://doi.org/10.1016/S0921-5107(97)00034-2

Times Cited Count：1 Percentile：11.83(Materials Science, Multidisciplinary)

no abstracts in English